Mehdi Asheghi
Nanoscale thermal transport phenomenon in the emerging data storage and semiconductor technologies. The current research involves cross-disciplinary collaborations between the Mechanical and Electrical Engineering Departments as well as several industry partners (Intel Corp., Ovonyx, NXP etc.) on the Phase Change Random Access Memory (PCRAM) technology.
Last modified Tue, 12 Feb, 2013 at 19:51
| Title | Author(s) | Journal | Date |
|---|---|---|---|
| Thermal Engineering of Phase Change Random Access Memory (PCRAM) Devices | Asheghi, M.and Goodson K.E | : Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM). | 05-2008 |
| Experimental Investigation of Nanoscale Thermal Transport in Hotspots at cryogenic temperatures | Ryu, H., Klein, L. J., Asheghi, M., Hamann H | Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM) | 05-2008 |
| Spatial Frequency Domain Heat Transfer Analysis of Hot Spot Spreading in Convectively Cooled Microprocessors | Yazdani, K., and Asheghi, M | Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM). | 05-2008 |
| Thermal Analyses of Confined Cell Design for Phase Change Random Access Memory (PCRAM | Small, E., Sadeghipour, S. M., Pileggi, L. and Asheghi, M. | Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM). | 05-2008 |
NSF NIRT, 2001-2005 Phonon Transport in Nanostructures with Application to Ultra-thin SOI Transistors. NSF TTTP, 2006-2008 Giant MagnetoThermal Resistance (GMTR) Phenomena. NSF TTTP, 2009-1012 "Nanosacle Thermal Characterizations of Chalcogenide Phase-Change (PC) Nanoengineered Materials."
