Dean Plummer studies both the physics which govern device operation in silicon integrated circuits and the technology used to fabricate these circuits. Recent work is aimed at extending silicon device structures into nanoscale dimensions. New device concepts are explored through computer simulation and promising ideas are fabricated in the Stanford Nanofabrication Facility to verify ideas experimentally. His research also explores the scaling limits of silicon technology and the application of this technology outside traditional integrated circuits.
Last modified Tue, 2 Oct, 2012 at 10:30
|Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth||S.L. Chen, P. B. Griffin and J. D.Plummer||IEEE Electron Device Letters||06-2010|
|Silicon-based Devices and Technology for the Nanoscale Era - Plenary Talk, 2004 SSDM, Tokyo, Japan||James Plummer||09-2009|
|"Educating Engineers for the 21st Century", Keynote Presentation, IEDM||James Plummer||12-2008|
|P-channel Germanium FinFET Based on Rapid Melt Growth||Jia Feng, Raymond Woo, Shulu Chen, Yaocheng Liu, Griffin, PB; Plummer, JD||IEEE Electron Device Letters||07-2007|
|Integration of Germanium-On-Insulator and Silicon MOSFETs on a Silicon Substrate||Feng, Y. Liu, P. B. Griffin and J. D. Plummer||IEEE Electron Device Letters||11-2006|
|Critical Thickness Enhancement of Epitaxial SiGe Films Grown on Small Structures||Y. Liang, W. D. Nix, P. B. Griffin and J. D. Plummer||J. Appl. Physics||02-2005|
|Impact Ionization MOS (I-MOS). I. Device and Circuit Simulations||K. Gopalakrishnan, P. B. Griffin and J. D. Plummer||IEEE Trans. on Elec. Devices||01-2005|
|High Quality Single-crystal Ge-on-insulator by Liquid-phase Epitaxy on Si Substrates||Y. Liu, M. D. Deal and J. D. Plummer||J. Appl. Physics||04-2004|
|Issues In Ultra Shallow Junction Fabrication: Dopant Activation and Defect Kinetics||James Plummer||04-2001|
|Material and Process Limits in Silicon VLSI Technology||J. D. Plummer and P. B. Griffin||IEEE Proceedings||03-2001|
- 1 of 2
2008 Elected into the American Academy of Arts & Sciences IEEE Andrew S. Grove Award 2007. 2006 IEDM Paul Rappaport Award McGraw-Hill/Jacob Millman Award 2004. IEEE Aldert Van der Ziel Award 2003. IEEE J.J. Ebers Award 2003. Aviation Week & Space Technology 2003 Laurels Award - Electronics. Semiconductor Industry Association 2001 University Research Award. IEEE Third Millennium Medal 2000. Teaching Awards at Stanford 1991, 1992, 1993. Electrochem. Society Solid State Science & Technology Award 1991. Best Paper Awards: ISSCC (1970, 1976, 1978), IEDM (1993, 1995), ISPSD (1996), MRS (2000), ICDS (2000).