Krishna Saraswat

Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.

To view a list of Professor Saraswat's publications, please visit: http://cis.stanford.edu/~saraswat/publication.html