Stacey Bent
The research in the Bent laboratory is focused on understanding and controlling surface and interfacial chemistry and applying this knowledge to a range of problems in semiconductor processing, micro- and nano-electronics, nanotechnology, and sustainable and renewable energy. Much of the research aims to develop a molecular-level understanding in these systems, and hence the group uses of a variety of molecular probes. Systems currently under study in the group include functionalization of semiconductor surfaces, mechanisms and control of atomic layer deposition, molecular layer deposition, nanoscale materials for light absorption, interface engineering in photovoltaics, catalyst and electrocatalyst deposition.
Last modified Tue, 19 Feb, 2013 at 13:25
| Title | Author(s) | Journal | Date |
|---|---|---|---|
| Formation of organic nanoscale laminates and blends by molecular layer deposition | P. W. Loscutoff, H. Zhou, S. B. Clendenning and S. F. Bent | ACS Nano | 01-2010 |
| Sputtered Pt-Ru alloys as catalysts for highly concentrated methanol oxidation | X. Jiang, T. M. Gür, F. B. Prinz, and S. F. Bent | J. Electrochem. Soc | 01-2010 |
| Periodic trends in organic functionalization of Group IV semiconductor surfaces | Jessica S. Kachian, Keith T. Wong and Stacey F. Bent | Accounts of Chemical Research | 01-2010 |
| ALD co-deposited and core-shell Ru-Pt catalysts for concentrated methanol oxidation | X. Jiang, T. M. Gür, F. B. Prinz, and S. F. Bent | Chem. Mat | 01-2010 |
| Atomic layer deposition of ZnS via in situ production of H2S | J. R. Bakke, J. S. King, H. J. Jung, R. Sinclair, and S. F. Bent | Thin Solid Films | 01-2010 |
| Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces | P. Ardalan, Y. Sun, P. Pianetta, C. B. Musgrave, and S. F. Bent | Langmuir | 01-2010 |
| Comparative study of titanium dioxide atomic layer deposition on silicon dioxide and hydrogen-terminated silicon | R. Methaapanon and S. F. Bent | J. Phys. Chem. C | 01-2010 |
| ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors | J. T. Tanskanen, J. R. Bakke, S, F. Bent, and T. A. Pakkanen | Langmuir | 01-2010 |
| Atomic layer deposition of CdS films | J. R. Bakke, H. J. Jung, J. T. Tanskanen, R. Sinclair and S, F. Bent | Chem. Mat. | 01-2010 |
| Reaction of phenyl isocyanate and phenyl isothiocyanate with the Ge(100)-2x1 surface | P. W. Loscutoff, Keith T. Wong, and S. F. Bent | J. Phys. Chem. C | 01-2010 |
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Fellow of the World Technology Network, 2011; Tau Beta Pi Award for Excellence in Undergraduate Teaching, 2006; AVS Fellow, 2006; Coblentz Award, 2001; Peter Mark Memorial Award, 2000; Research Corporation Cottrell Scholar, 1998; Camille Dreyfus Teacher-Scholar, 1998; Terman Faculty Fellow, 1998; Beckman Young Investigator, 1997; National Science Foundation CAREER Award, 1995
