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Krishna Saraswat

Krishna Saraswat

PhD, Stanford University, EE (1974)
MS, Stanford University, EE (1969)
BE, BITS Pilani, India, Electronics (1968)


(650) 725-3610

Saraswat is working on a variety of problems related to new and innovative materials, structures, and process technology of silicon, germanium and III-V devices and interconnects for VLSI and nanoelectronics. Areas of his current interest are: new device structures to continue scaling MOS transistors, DRAMs and flash memories to nanometer regime, 3-dimentional ICs with multiple layers of heterogeneous devices, metal and optical interconnections and high efficiency and low cost solar cells.